Infineon IDWD30G120C5: A High-Performance 1200V Reverse Conducting IGBT7 for Industrial Drives and UPS Applications

The relentless pursuit of higher efficiency, power density, and reliability in power electronics continues to drive semiconductor innovation. Addressing these demands head-on, Infineon Technologies introduces the IDWD30G120C5, a state-of-the-art 1200V Reverse Conducting (RC) IGBT based on the cutting-edge seventh-generation IGBT7 technology. This device is engineered to set a new benchmark in performance for demanding applications such as industrial motor drives and uninterruptible power supplies (UPS).

At the core of this innovation is the RC-H5 technology, which monolithically integrates an anti-parallel diode into the IGBT chip itself. This revolutionary approach eliminates the need for a separate external diode, a significant limitation of standard IGBTs. The result is a drastic reduction in the overall system footprint and weight, enabling more compact and power-dense inverter designs. Furthermore, by removing the parasitic inductance and thermal resistance associated with external diode packages, the module achieves superior switching performance and enhanced thermal behavior.

The IGBT7 technology itself delivers a remarkable leap forward. Key to its performance is the adoption of a micro-pattern trench (MPT) field stop structure. This design minimizes saturation voltage (V_CE(sat)) and significantly reduces turn-off losses (E_off), achieving an optimal trade-off that was previously unattainable. For system designers, this translates directly into lower total power losses, higher operating frequencies, and the ability to handle higher currents within the same form factor. Consequently, systems can operate with higher efficiency, reducing energy consumption and cooling requirements.

The benefits of the IDWD30G120C5 are particularly impactful in its target applications. In industrial drives, the low losses contribute to higher system efficiency, which is critical for reducing operational costs in continuous, high-power processes. The robust design and high short-circuit ruggedness (t_sc = 3µs) ensure maximum reliability in harsh industrial environments. For three-phase UPS systems, the device enables higher switching frequencies, which allows for smaller passive filter components and a more compact overall system design without compromising on output power quality or reliability.

Packaged in the industry-standard EconoDUAL™ 3, the module offers a drop-in upgrade path for existing designs while providing a future-proof platform for new developments. Its low inductance package and the use of XT interconnection technology further enhance its performance and long-term reliability.

ICGOODFIND: The Infineon IDWD30G120C5 RC-IGBT7 represents a significant architectural shift, merging the switch and diode to deliver unprecedented levels of power density and efficiency. It is a pivotal component for engineers designing next-generation power conversion systems that demand maximized performance, minimized size, and exceptional reliability.

Keywords: IGBT7, Reverse Conducting IGBT, Power Density, Industrial Drives, UPS